IN THE RESENT YEARS, THE CONSIDERABLE THEORETICAL AND EXPERIMENTAL EFFORTS HAVE BEEN DEVOTED TO INVESTIGATE THE ELECTRICAL AND STRUCTURAL PROPERTIES AND APPLICATIONS OF (BNNTS) [1-2]. THE STRUCTURAL PROPERTIES OF BNNTS ARE SIMILAR CNTS, WHILE THEIR ELECTRONIC PROPERTIES ARE QUITE DIFFERENT FROM CNTS, HOWEVER THEY EXHIBIT ONLY SEMICONDUCTING PROPERTIES INDEPENDENT OF THEIR CHIRALITY AND DIAMETER WITH WIDE BAND GAPS RANGING FROM 4 TO5.5 EV. LIKE DIAMOND, Boron Nitride ACTS AS AN ELECTRICAL INSULATOR, BUT IT IS AN EXCELLENT CONDUCTOR OF HEAT [3-4]. IN THIS COMPUTATIONAL, THE REPRESENTATIVE MODELS OF (3,3), (4, 4) AND (5, 5) ARMCHAIR SINGLE-WALLED BNNTS IN WHICH THE ENDS OF NanotubeS ARE SATURATED BY HYDROGEN ATOMS (SEE FIGS.1) IN PRESENCE AND ABSENCES OF AS DOPED ARE ALLOWED TO RELAX IN THE OPTIMIZATION AT THE DFT LEVEL OF B3LYP EXCHANGE FUNCTIONAL AND 6-31G* STANDARD BASIS SET USING THE GAUSSIAN 03 SET OF PROGRAMS. THE STRUCTURAL PARAMETERS, QUANTUM PROPERTIES INVOLVING: BOND LENGTH, BOND ANGLE, HOMO-LUMO ORBITAL, GAP ENERGY, ELECTRON AFFINITY, ELECTRONEGATIVITY, CHEMICAL POTENTIAL, GLOBAL HARDNESS AND GLOBAL SOFTNESS NQR PARAMETERS OF BNNTS ARE CALCULATED. BY DOPING THE AS ON THE BNNTS THE BAND GAP ENERGY DECREASE AND NQR VALUES IN THE LAYER 4 REGIONS NEIGHBOR OF SUBSTITUTION B42 UNDERGO SIGNIFICANT CHANGES DUE TO THE CHEMICAL BONDING TO THE P ATOM AND LOWEST ELECTRONIC DENSITY OF B-P BOND; THEREFORE, THE NQR VALUES FOR THIS NUCLEUS SIGNIFICANTLY SMALLER THAN THE PRISTINE MODEL.